Epitaxial Formation Mechanisms of Source and Drain Regions

ABSTRACT

The embodiments of mechanisms for forming source/drain (S/D) regions of field effect transistors (FETs) described enable forming an epitaxially grown silicon-containing material without using GeH 4  in an etch gas mixture of an etch process for a cyclic deposition/etch (CDE) process. The etch process is performed at a temperature different form the deposition process to make the etch gas more efficient. As a result, the etch time is reduced and the throughput is increased.

CROSS-REFERENCES TO RELATED APPLICATIONS

This application is a divisional application of patent application Ser. No. 13/719,826, entitled “EPITAXIAL FORMATION MECHANISMS OF SOURCE AND DRAIN REGIONS,” filed on Dec. 19, 2012 (Attorney Docket No. TSMC2012-1016), which application is incorporated herein by reference.

The present application is related to U.S. application Ser. No. 13/493,626, entitled “EPITAXIAL FORMATION OF SOURCE AND DRAIN REGIONS” filed on Jun. 11, 2012 (Attorney Docket No. TSMC2011-1479), which is also incorporated herein by reference in its entirety.

TECHNICAL FIELD

The present disclosure relates generally to the field of semiconductor devices and, more particularly, to integrated circuits and fabrication methods thereof.

BACKGROUND

The semiconductor integrated circuit (IC) industry has experienced rapid growth. Technological advances in IC materials and design have produced generations of ICs where each generation has smaller and more complex circuits than the previous generation. However, these advances have increased the complexity of processing and manufacturing ICs and, for these advances to be realized, similar developments in IC processing and manufacturing are needed.

In the course of IC evolution, functional density (i.e., the number of interconnected devices per chip area) has generally increased while geometry size (i.e., the smallest component (or line) that can be created using a fabrication process) has decreased. This scaling down process generally provides benefits by increasing production efficiency and lowering associated costs. Such scaling-down also produces a relatively high power dissipation value, which may be addressed by using low power dissipation devices such as complementary metal-oxide-semiconductor (CMOS) devices.

BRIEF DESCRIPTION OF THE DRAWINGS

The present disclosure is best understood from the following detailed description when read with the accompanying figures. It is emphasized that, in accordance with the standard practice in the industry, various features are not drawn to scale and are used for illustration purposes only. In fact, the numbers and dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion.

FIG. 1 is a flowchart illustrating an exemplary method of forming an integrated circuit.

FIGS. 2A-2E are cross-sectional views of an integrated circuit during various fabrication stages, in accordance with some embodiments.

FIG. 3A is a process sequence of a CDE (cyclic deposition/etch) process in a process chamber, in accordance with some embodiments.

FIG. 3B shows process temperature of a CDE unit cycle, in accordance with some embodiments.

FIG. 3C shows process pressure of a CDE unit cycle, in accordance with some embodiments.

FIG. 4 shows a diagram of dissociation rate of HCl as a function of temperature, in accordance with some embodiments.

FIG. 5A shows a temperature diagram as a function of process time of a CDE unit cycle, in accordance with some embodiments.

FIG. 5B shows a temperature diagram as a function of process time of a CDE unit cycle, in accordance with some embodiments.

DETAILED DESCRIPTION

It is understood that the following descriptions provides many different embodiments, or examples, for implementing different features of the disclosure. Specific examples of components and arrangements are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to be limiting. In addition, the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. Moreover, the formation of a feature on, connected to, and/or coupled to another feature in the present disclosure that follows may include embodiments in which the features are formed in direct contact, and may also include embodiments in which additional features may be formed interposing the features, such that the features may not be in direct contact. In addition, spatially relative terms, for example, “lower,” “upper,” “horizontal,” “vertical,” “above,” “below,” “up,” “down,” “top,” “bottom,” etc. as well as derivatives thereof (e.g., “horizontally,” “downwardly,” “upwardly,” etc.) are used for ease of the present disclosure of one feature's relationship to another feature. The spatially relative terms are intended to cover different orientations of the device including the features.

As semiconductor devices, such as metal-oxide-semiconductor field effect transistors (MOSFETs), are scaled down through various technology nodes, strained source/drain features (e.g., stressor regions) have been implemented using epitaxial (epi) semiconductor materials to enhance carrier mobility and improve device performance. Forming a MOSFET with stressor regions often epitaxially grows silicon (Si) to form raised source and drain features for an n-type device, and epitaxially grows silicon germanium (SiGe) to form raised source and drain features for a p-type device. Various techniques directed at shapes, configurations, and materials of these source and drain features have been implemented to further improve transistor device performance. Although existing approaches have been generally adequate for their intended purposes, they have not been entirely satisfactory in all respects.

The embodiments will be described with respect to specific embodiments in a specific context, namely a source/drain region for a complementary metal-oxide semiconductor (CMOS) transistor. The embodiments may also be applied, however, to other doped regions within a semiconductor device.

Illustrated in FIG. 1 is a flowchart of a method of forming an integrated circuit, in accordance with some embodiments. FIGS. 2A-2E are schematic cross-sectional views of an integrated circuit during various fabrication stages, in accordance with some embodiments. The integrated circuit may include various passive and active microelectronic devices, such as resistors, capacitors, inductors, diodes, metal-oxide-semiconductor field effect transistors (MOSFETs), complementary MOS (CMOS) transistors, bipolar junction transistors (BJTs), laterally diffused MOS (LDMOS) transistors, high power MOS transistors, FinFET transistors, or other types of transistors. It is understood that FIGS. 2A-2E have been simplified for a better understanding of the concepts of the present disclosure. Accordingly, it should be noted that additional processes may be provided before, during, and after the method 100 of FIG. 1, and that some other processes may only be briefly described herein.

Referring now to FIG. 1, the method 100 can include forming a gate structure over a substrate (block 110). The method 100 can include removing portions of the substrate to form recesses adjacent to the gate structure (block 120). The method 100 can also include forming a silicon-containing material structure in each of the recesses (block 130).

Referring now to FIGS. 2A-2E in conjunction with FIG. 1, an integrated circuit 200 can be fabricated in accordance with the method 100 of FIG. 1. In FIG. 2A, the integrated circuit 200 can be built on a substrate 201. Substrate 201 may comprise bulk silicon, doped or undoped, or an active layer of a silicon-on-insulator (SOI) substrate. Generally, an SOI substrate comprises a layer of a semiconductor material such as silicon, germanium, silicon germanium, SOI, silicon germanium on insulator (SGOI), or combinations thereof. Other substrates that may be used include multi-layered substrates, gradient substrates, or hybrid orientation substrates. Substrate 201 may include an epitaxial layer (epi layer), and may be strained for performance enhancement.

In some embodiments forming n-type transistors, the substrate 201 can be a silicon substrate doped with a p-type dopant, such as boron (resulting in a p-type substrate). A metal gate structure can have a stack structure including a high dielectric constant gate layer, a diffusion barrier layer, a metal work function layer, a metallic layer, and/or other suitable layers. A dummy gate structure can have a stack structure including a dummy material layer, a hard mask layer, and/or other suitable layers.

In some embodiments, a gate stack 205 comprising a gate dielectric 207, a gate electrode 209, first spacers 211, and second spacers 212 may be formed over the substrate 201. The gate dielectric layer 207 includes a dielectric material, such as silicon oxide, silicon oxynitride, silicon nitride, a high-k dielectric material, or combinations thereof. Exemplary high-k dielectric materials include hafnium oxide (HfO₂), aluminum oxide (Al₂O₃), zirconium oxide (ZrO₂), gallium oxide (Ga₂O₃), titanium oxide (TiO₂), lanthanum oxide (La₂O₃), tantalum oxide (Ta₂O₅), gadolinium oxide (Gd₂O₃), yttrium oxide (Y₂O₃), hafnium dioxide-alumina (HfO₂-Al₂O₃) alloy, hafnium aluminum oxide (HfAlO), hafnium silicon oxide (HfSiO), hafnium silicon oxynitride (HfSiON), hafnium tantalum oxide (HfTaO), hafnium titanium oxide (HfTiO), hafnium zirconium oxide (HfZrO), titanium aluminum oxide (TiAlO), lanthanum aluminum oxide (such as LaAlO₃), other high-k dielectric material, or combinations thereof. The gate dielectric layer 207 may include a multilayer structure. For example, the gate dielectric layer 207 may include an interfacial layer formed over the substrate 201, and a high-k dielectric layer formed over the interfacial layer. The interfacial layer may be a silicon oxide layer formed by a thermal process or ALD process.

The gate electrode layer 209 is disposed over the gate dielectric layer 207. The gate electrode layer 209 includes a conductive material, such as polycrystalline silicon (polysilicon), aluminum (Al), copper (Cu), titanium (Ti), tantalum (Ta), tungsten (W), molybdenum (Mo), platinum (Pt), tantalum nitride (TaN), titanium nitride (TiN), tungsten nitride (WN), titanium aluminum (TiAl), titanium aluminum nitride (TiAlN), TaCN, TaC, TaSiN, other conductive material, or combinations thereof. The conductive material of the gate electrode layer 209 may be doped or undoped depending on design requirements of field effect transistor devices of integrated circuit 200. In some embodiments, the gate electrode layer 209 includes a work function layer tuned to have a proper work function for enhanced performance of the field effect transistor devices of integrated circuit 200. For example, in the depicted embodiment, where the field effect transistor devices are NFETs, the work function layer includes an n-type work function metal (n-metal), such as Ta, TiAl, TiAlN, TaCN, other n-type work function metal, or a combination thereof. Where the field effect transistor device is a PFET, the work function layer includes a p-type work function metal (p-metal), such as TiN, TaN, other p-type work function metal, or combination thereof. In furtherance of the present example, a conductive layer, such as an aluminum layer, is formed over the work function layer, such that the gate electrode layer 209 includes a work function layer disposed over the gate dielectric layer 207 and a conductive layer disposed over the work function layer.

Surrounding the gate stack 205 are the first spacers 211 and the second spacers 212. The gate stack 205 and the surrounding spacers, such as spacers 211 and 212, form a gate structure 206. The spacer layers may comprise SiN, oxynitride, SiC, SiON, oxide, and the like. However, as one of ordinary skill in the art will recognize, the first spacers 211 and the second spacers 212 as illustrated in FIG. 2A are intended to be merely illustrative and are not intended to limit the embodiments to these descriptions. Rather, any suitable number and combination of spacer layers and shapes may be utilized in order to form spacers for the gate stack 205, and any suitable combination of spacers may alternatively be utilized.

In some embodiments of forming an n-type transistor, n-type lightly-doped drains (LDDs) 219 can be formed in the substrate 201. Portions of the n-type LDDs 219 can be formed under the gate structure 205. The n-type LDDs 219 can be formed of n-type dopants (impurities). For example, the dopants can comprise phosphorous, arsenic, and/or other group V elements. In some embodiments, at least one thermal annealing process, e.g., a rapid thermal annealing (RTA) process, can be performed to activate the dopants of the n-type LDDs 219. In some embodiments of forming an n-type transistor, p-type pocket doped regions (not shown) can be formed in the substrate 201. The p-type pocket doped regions can be formed of p-type dopants (impurities). For example, the dopants can comprise boron and/or other group III elements.

FIG. 2A illustrates the formation of recesses 210 within the substrate 201. The recesses 210 may be formed using, e.g., a wet etch process selective to the material of the substrate 201 and uses the gate stack 205, the first spacers 211, and the second spacers 212 as a hard mask in order to form the recesses 210. For example, an etchant such as carbon tetrafluoride (CF₄), HF, tetramethylammonium hydroxide (TMAH), or combinations of thereof, or the like may be used to perform the wet etch and form the recesses 210. The recesses 210 provide an opening in the substrate 201 into which source/drain regions (whose formation is described further below with respect to FIGS. 2B-2E) will subsequently be formed.

Recess 210, formed below and between a spacer 212 surrounding gate structure 205 and a neighboring spacer 212 as shown in FIG. 2A, has a width W₁ of between about 50 Å and about 500 Å, in accordance with some embodiments. Recesses 210 may additionally undercut the first spacers 211 and/or the second spacers 212. Additionally, the wet etch process may be continued until the recesses 210 have a depth D₁ from a surface of the substrate 201. In some embodiments, D₁ is in a range from about 50 Å and about 600 Å. However, these dimensions are not intended to limit the present embodiments, as any suitable dimensions for the recesses 210 may alternatively be utilized.

The recesses 210 may be formed to have either an angular or rounded shape. In an embodiment in which the recesses 210 have an angular shape, the recesses 210 may be formed to have a first angle α₁ along with top of the recesses 210 and a second angle α₂ along the bottom of the recesses 210. In some embodiments, the first angle α₁ is in a range from about 90° and about 180°. The second angle α₂ is in a range from about 85° and about 170°, in accordance with some embodiments.

Referring to FIGS. 1 and 2B-2E, the method 100 can include forming an epitaxial silicon-containing material structure in each of the recesses (block 130). In some embodiments, the block 130 can include performing an epitaxial deposition/partial etch process and repeating the epitaxial deposition/partial etch process at least once. Such repeated deposition/partial etch process is also called a cyclic deposition/etch (CDE) process.

The block 130 may include epitaxially depositing a silicon-containing material (or layer) 215, in recesses 210 as shown in FIGS. 2B-2D, in accordance with some embodiments. Block 130 also may include depositing a silicon-containing layer 216 over the silicon-containing material 215 in recesses 210, as shown in FIG. 2E, in accordance with some embodiments.

The deposition of the silicon-containing material 215 includes in-situ doping the silicon-containing material 215, in accordance with some embodiments. For example, forming an n-type transistor can use an n-type doping precursor, e.g., phosphine (PH₃) and/or other n-type doping precursor. By using the in-situ doping process, the dopant profile of the silicon-containing material 215 can be desirably achieved. In some embodiments, the silicon-containing material 215 can be an n-type doped silicon layer that is doped with phosphorus (Si:P). In some embodiments, the silicon-containing material 215 can be an n-type doped silicon layer that is doped with both phosphorus and carbon (Si:CP). Carbon could impede the out-diffusion of phosphorus from the silicon-containing material 215. Other types of dopants may also be included. In some embodiments, the phosphorus dopant has a concentration in a range from about 0.1% to about 5% (atomic percent). In some embodiments, the carbon dopant has a concentration in a range from about 0.1% to about 5% (atomic percent).

In some embodiments, the silicon-containing material 215 can be formed by chemical vapor deposition (CVD), e.g., low pressure CVD (LPCVD), atomic layer CVD (ALCVD), ultrahigh vacuum CVD (UHVCVD), reduced pressure CVD (RPCVD), any suitable CVD; molecular beam epitaxy (MBE) processes; any suitable epitaxial process; or any combinations thereof. In some embodiments, the deposition of the silicon-containing material 215 can have a deposition temperature of about 750° C. or less. In other embodiments, the deposition temperature ranges from about 500° C. to about 750° C. The pressure of the deposition process can range from about 5 Torr to about 500 Torr.

The deposition of the silicon-containing material 215 can use at least one silicon-containing precursor, such as silane (SiH₄), disilane (Si₂H₆), trisilane (Si₃H₈), Dichlorosilane (SiH₂Cl₂), another silicon-containing precursor, and/or any combinations thereof. In some embodiments, the silicon-containing precursor can have a flow rate ranging from about 20 standard cubic centimeters per minute (sccm) to about 500 sccm. In other embodiments forming a p-type transistor, the silicon-containing material 215 can be made of at least one material, such as silicon, silicon germanium, other semiconductor materials, and/or any combinations thereof.

As mentioned above, the deposition of the silicon-containing material 215 includes in-situ doping the silicon-containing material 215, in accordance with some embodiments. For example, forming an n-type transistor can use an n-type doping precursor, e.g., phosphorous-containing gases such as phosphine (PH₃), arsenic-containing gases such as arsine (AsH₃), other n-type dopant-containing gases, or a combination thereof. In some embodiments, the n-type doping precursor can have a flow rate ranging from about 20 sccm to about 500 sccm. A carbon-containing gas, such as monomethylsilane (MMS), is also included to dope the silicon-containing material 215 with carbon, in accordance with some embodiments. In some embodiments, the carbon-containing gas has a flow rate ranging from about 10 sccm to about 600 sccm.

The silicon-containing material 215 in recesses 210 is epitaxial. The deposition process forms a thin epitaxial layer 215 a of silicon-containing material in recesses 210 and an amorphous silicon-containing material 215* on gate electrode 209 and spacers 212, as shown in FIG. 2B in accordance with some embodiments. Referring to FIG. 2C, an etching (or partial etching) process 220 removes the amorphous silicon-containing material 215* and also a portion of the silicon-containing material 215 a in recesses 210. The remaining silicon-containing material 215 is formed in each of the recesses 210. In some embodiments, the etching process 220 can use an etching gas including at least one of hydrogen chloride (HCl), chlorine (Cl₂), germanium hydride (GeH₄), other suitable etching gases, and/or any combinations thereof. The flow rate of the etching gas can range from about 50 sccm to about 750 sccm, in accordance with some embodiments. In some embodiments, the pressure of the etching process 220 ranges from about 5 Torr to about 500 Torr. In some embodiments, the etching process 220 can have an etching temperature of about 590° C. or less. In other embodiments, the etching temperature can range from about 500° C. to about 590° C. The process temperatures and pressures for the deposition process and etch process to form the silicon-containing material 215 are identical in some embodiments.

The etching process 220 would remove the amorphous silicon-containing material 215* over non-crystalline surface at a rate higher than the removal rate of epitaxial silicon-containing material 215. In addition, the etching process would remove a portion of epitaxial silicon-containing material 215 including the dislocations 241 near the gate corners 240.

The epitaxial deposition/partial etch process is repeated a number of times until a desired thickness D₂ is reached, as shown in FIG. 2D in accordance with some embodiments. As a result, such repeated deposition/partial etch process is called a cyclic deposition/etch (CDE) process. In some embodiments, D₂ is in a range from about 10 Å and about 500 Å. The dotted lines in recesses 210 are used to illustrate the multiple sub-layers formed by the epitaxial CDE process.

As mentioned above, the silicon-containing material 215 can be an n-type doped silicon layer that is doped with both phosphorus and carbon, in accordance with some embodiments. Carbon could impede the out-diffusion of phosphorus from the silicon-containing material 215. The phosphorus-and carbon-doped silicon layer can be referred to as a Si:CP layer. The dopants in the silicon-containing material 215 deposited by CDE have higher level of activation than implanted dopants. In some embodiments, the dopant activation level is in a range from about 2E20 atoms/cm³ to about 6E20 atoms/cm³. In contrast, the activation of implanted dopant at S/D is typically at about 1E20 to 2E20 atoms/cm³level. The higher activation level makes formation of in-situ doping of epitaxial grown silicon-containing desirable.

Following the CDE process, a selective epitaxial growth (SEG) process may be used to deposit additional silicon-containing film to fill the remaining recesses 210. The SEG process has a higher growth rate than the CDE process, in accordance with some embodiments. The SEG process is a selective deposition process and the silicon-containing film formed by this process deposits on epitaxial silicon-containing film, such as layer 215. SEG processes utilize simultaneous deposition and etch. In some embodiments, the surface of the silicon-containing layer 216, which is epitaxial, is leveled with silicon substrate surface 230. In some embodiments, the surface of the silicon-containing layer 216 is above silicon substrate surface 230, as shown in FIG. 2E. The thickness D₃ of the silicon-containing layer 216 is in a range from about 30 Å to about 400 Å, in some embodiments. In some embodiments, the silicon-containing layer 216 is doped with phosphorus (Si:P).

Layer 215 and layer 216 form the S/D regions 250. In some embodiments, the material and/or method of forming the silicon-containing layer 216 can be as same as or similar to those of the silicon-containing material 215. In some embodiments, the silicon-containing layer 216 may have a dopant concentration different from that of the silicon-containing material 215.

As mentioned above, the process to form the silicon-containing material 215 is a CDE process, which involves cyclic deposition and etch processes. FIG. 3A shows the process sequence of a CDE process 300 in a process chamber, in accordance with some embodiments. The process 300 include a deposition operation 301, a post-deposition pump operation 302, a partial-etch operation 303, and a post-etch pump operation 304, in accordance with some embodiments. The CDE process occurs in a process chamber. As mentioned above, the deposition operation 201 employs a silicon-containing gas, such as trisilane (Si₃H₈), di-silane (Si₂H₆), etc., as silicon source, and a dopant gas, such as PH₃, is also used to provide a dopant for the deposited silicon-containing material layer. In some embodiments, the pressure of the etching process 220 ranges from about 5 Torr to about 500 Torr. In some embodiments, the etching temperature can range from about 500° C. to about 590° C. In some embodiments, the deposition time is in a range from about 3 seconds to about 20 seconds. In some embodiments, the amount of the silicon-containing material 215 deposited in operation 301 is in a range from about 15 Å to about 80 Å during each CDE unit cycle, in accordance with some embodiments.

After deposition operation 301, a post-deposition pump operation 302 is used to remove the deposition gas from the process chamber. Once the chamber is removed of the deposition gases, the etch operation 303 follows. In some embodiments, the etch operation 303 employs HCl gas and GeH₄ gas. A non-reactive carrier gas, such as an inert gas, or N₂, is also used in the etch gas mixture in accordance with some embodiments. HCl and GeH₄ react with silicon to etch silicon. In some embodiments, GeH₄ acts as an etching catalyst to react with silicon to form SiGe, which is then removed by HCl. The etching temperature and pressure are maintained at the same levels as the deposition process, in some embodiments. The etch time is in a range from about 40 seconds to about 200 seconds, in some embodiments. The amount of the silicon-containing material 215 removed in operation 303 is in a range from about 5 Å and about 30 Å during each CDE unit cycle, in accordance with some embodiments.

After the etching operation 303, the pump operation 304 follows to remove the etching gases used in operation 303 from the chamber. FIG. 3B shows process temperature of a CDE unit cycle when the process temperature is maintained constant (isothermal) T_(CDE) throughout the CDE unit cycle, in accordance with some embodiments. FIG. 3C shows process pressure of a CDE unit cycle when the process pressure is maintained the same (isobaric) P_(CDE) during deposition and etching processes, in accordance with some embodiments. Using a CDE process with constant temperature (isothermal) and the same process pressure (isobaric) during deposition and etch operations has the advantage of good process control and chamber matching. In each CDE unit cycle, a net thickness in a range from about 10 Å and about 40 Å is formed in a unit cycle in accordance with some embodiments. After operation 304, the process sequence involving operations 301, 302, 303, and 304 repeat again until the targeted thickness D₂ of silicon-containing material 215 is reached.

In the CDE process described above, GeH₄ is used in the etching gas mixture as an etch catalyst. However, the Ge (germanium) in the GeH₄ could be incorporated in the silicon-containing material 215 unintentionally. The Ge incorporated in the silicon-containing material 215 could result in increase in resistivity of silicon-containing material 215. For advanced technology nodes, such as N20 and beyond, such increase of resistivity is unacceptable because of its negative effects on Ion (on current) and device performance. In order to remove GeH₄ from the gas mixture, the process condition needs to be adjusted to compensate for the loss of GeH₄ as the etch catalyst. Without the usage of GeH₄, HCl needs to be dissociated to react with silicon.

FIG. 4 shows a diagram of dissociation rate of HCl in the process chamber as a function of etch temperature, in accordance with some embodiments. The dissociation rate and reactivity of HCl increases with temperature. HCl dissociates into hydrogen and chlorine at high temperature. The etch rate of HCl becomes significant at a temperature near 600° C. Therefore, the etch temperature should be close to or higher than 600° C. In some embodiments, the etch temperature of the etch process without GeH₄ is in a range from about 600° C. to about 700° C. By setting the processing temperature of the etch process higher, the etch time can also be shortened to increase process throughput. In addition, the etch gas flow rate and pressure can be increased to increase the etch rate and to shorten etch process time.

FIG. 5A shows a temperature diagram as a function of process time of a CDE unit cycle, in accordance with some embodiments. FIG. 5A shows that the deposition occurs at T_(D) and the etch occurs at T_(E). FIG. 5B shows a pressure diagram as a function of process time of a CDE unit cycle, in accordance with some embodiments. FIG. 5B shows that the deposition pressure occurs at P_(D) and at P_(E) for the etch.

The deposition process gas mixture has been described above. T_(D) is in a range from about 500° C. to about 590° C., in accordance with some embodiments. T_(E) is in a range from about 600° C. to about 670° C., in accordance with some embodiments. P_(D) is in a range from about 5 Torr to about 100 Torr, in accordance with some embodiments. P_(E) is in a range from about 50 Torr to about 500 Torr, in accordance with some embodiments. The flow rate of HCl is in a range from about 50 sccm to about 30 slm (standard liters per minute). A non-reactive carrier gas, such as an inert gas, or N₂, is also used in the etch gas mixture in accordance with some embodiments. In some embodiments, the carrier gas a flow rate in a range from about 2 slm to about 10 slm.

The deposition process starts at t₁ and occurs for the duration of t_(D). As mentioned above, the deposition time (t_(D)) is in a range from about 3 seconds to about 20 seconds. The etch process starts at t₂ and occurs for the duration of t_(E). The next CDE unit cycle starts at t₃. With the process change in the etch process, which is without GeH₄, has higher process temperature and pressure than the deposition process and a higher flow rate of HCl compared to the etch process described above, the etch time (t_(E)) is also in a range from about 3 seconds to about 30 seconds, which time and range are shorter than the time and range of from about 40 seconds to about 200 seconds described above.

Using the processing conditions described above along with FIGS. 5A and 5B, the CDE process does not involve GeH₄ as a catalyst, which enables no Ge incorporation in the silicon containing material 215. The resistance of silicon containing material 215 without Ge incorporation is reduced consistently across the wafer to a range from about 0.2 mohm-cm to about 0.6 mohm-cm, in accordance with some embodiments. Further, by increasing the processing temperature of the etch process in the CDE unit cycle, the etch process time is greatly reduced. Consequently, the throughputs of the CDE unit cycle and overall CDE process are increased.

FIGS. 5A and 5B show that there are temperature ramp-up time, t_(p1), and temperature ramp-down time, t_(p2), to ensure temperatures of the CDE process chamber, substrate holder, and substrate of the CDE process chamber reach the targeted values. To enable fast rise and fall of process temperatures, the process chamber needs to have proper temperature control system. For example, good thermal sensing devices and sufficient heating and cooling elements are needed. In some embodiments, t_(p1), is in a range from about 5 seconds to about 300 seconds. In some embodiments, tp2, is in a range from about 5 seconds to about 300 seconds.

As noted, the processes of the method 100 described above in conjunction with FIGS. 1, 2A-2E, 3A-3C, and 5A-5B are merely exemplary. The method 100 can include different steps according to different process flows. For example, the gate structure 205 can be formed by a gate-first process or a gate-last process. In some embodiments using a gate-last process, the method 100 can include a gate replacing process. The gate structure 205 can be a dummy gate structure. The dummy gate structure 205 can each include a dummy gate material and a hard mask material formed thereover. The dummy gate material can be made of at least one material such as polysilicon, amorphous silicon, silicon oxide, silicon nitride, a material having an etching rate that is substantially different from the spacers (shown in FIG. 2A).

For the gate-last process, the hard mask materials and the dummy gate materials can be removed, for example, by a wet etch process, a dry etch process, or any combinations thereof. After removing the dummy gate materials, the method 100 can include forming gate electrode material within openings in which the dummy gate materials are disposed. In some embodiments, the gate electrode material can be a stack structure including a diffusion barrier layer, a metallic work function layer, a metallic conductive layer, and/or other suitable material layers.

The embodiments of mechanisms for forming source/drain (S/D) regions of field effect transistors (FETs) described enable forming an epitaxially grown silicon-containing material without using GeH₄ in an etch gas mixture of an etch process for a cyclic deposition/etch (CDE) process. The etch process is performed at a temperature different from the deposition process to make the etch gas more efficient. As a result, the etch time is reduced and the throughput is increased.

In some embodiments, a method of forming an integrated circuit is provided. The method includes forming a plurality of gate structures over a substrate, and removing portions of the substrate to form recesses adjacent to the plurality of gate structures. The method also includes depositing a first epitaxial silicon-containing layer in the recesses, and depositing the first epitaxial silicon-containing layer uses a cyclic deposition etching (CDE) process. The CDE process has a CDE unit cycle, and the CDE unit cycle has a deposition process and an etch process. The CDE unit cycle uses an etch temperature of the etch process is different from a deposition temperature of the deposition process in the CDE unit cycle. The method further includes depositing a second epitaxial silicon-containing layer over the first epitaxial silicon-containing layer to form source and drain regions next to the plurality of gate structures.

In some other embodiments, a method of forming an integrated circuit is provided. The method includes forming a plurality of gate structures over a substrate, and removing portions of the substrate to form recesses adjacent to the plurality of gate structures. The method also includes depositing a first epitaxial silicon-containing layer in the recesses, and depositing the first epitaxial silicon-containing layer uses a cyclic deposition etching (CDE) process. The CDE process has a CDE unit cycle, and the CDE unit cycle has a deposition process and an etch process. The CDE unit cycle uses an etch temperature of the etch process is higher from a deposition temperature of the deposition process in the CDE unit cycle. The method further includes depositing a second epitaxial silicon-containing layer over the first epitaxial silicon-containing layer to form source and drain regions next to the plurality of gate structures.

In yet some other embodiments, an integrated circuit is provided. The integrated circuit includes a gate structure disposed over a substrate, and a silicon-containing material structure formed in and over a recess adjacent to the gate structure. The silicon-containing material structure includes a first epitaxial layer and a second epitaxial layer. The first epitaxial layer has a resistance in a range from about 0.2 mohm-cm to about 0.6 mohm-cm.

The foregoing outlines features of several embodiments so that those skilled in the art may better understand the aspects of the present disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments introduced herein. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions, and alterations herein without departing from the spirit and scope of the present disclosure. 

What is claimed is:
 1. An integrated circuit, comprising: a gate structure disposed over a substrate; and a silicon-containing material structure formed in and over a recess adjacent to the gate structure, wherein the silicon-containing material structure includes a first epitaxial layer and a second epitaxial layer, wherein the second epitaxial layer is formed over the first epitaxial layer, and wherein the first epitaxial layer has a resistance in a range from about 0.2 mohm-cm to about 0.6 mohm-cm.
 2. The integrated circuit of claim 1, further comprising a lightly-doped-drain (LDD), wherein the LDD is formed in the substrate and under the gate structure, wherein the LDD contacts the gate structure and the first epitaxial layer.
 3. The integrated circuit of claim 1, wherein the first epitaxial layer is doped with phosphorus and carbon, wherein an atomic concentration of the phosphorus is in a range from about 0.1% to about 5%, and wherein an atomic concentration of the carbon is in a range from about 0.1% to about 5%.
 4. The integrated circuit of claim 1, wherein the recess has a depth in a range from about 50 Å to about 600 Å.
 5. The integrated circuit of claim 1, wherein the recess has a first angle between an upper portion of a sidewall of the recess and a lower portion of the sidewall of the recess, wherein the recess has a second angle between the lower portion of the sidewall of the recess and a bottom of the recess.
 6. The integrated circuit of claim 5, wherein the first angle is in a range from about 90° to about 180°, and the second angle is in a range from about 85° to about 170°.
 7. The integrated circuit of claim 1, wherein a thickness of the first epitaxial layer is in a range from about 10 Å to about 500 Å.
 8. The integrated circuit of claim 1, wherein a dopant activation level of the first epitaxial layer is in a range from about 2E20 atoms/cm³ to about 6E20 atoms/cm³.
 9. The integrated circuit of claim 1, wherein a thickness of the second epitaxial layer is in a range from about 30 Å to about 400 Å.
 10. An integrated circuit, comprising: a substrate; a gate structure over the substrate; an epitaxial silicon-containing region formed in and over a recess adjacent to the gate structure, wherein the epitaxial silicon-containing region comprises a first epitaxial layer and a second epitaxial layer, wherein the first epitaxial layer contacts a bottom and a sidewall of the recess and the second epitaxial layer is formed over the first epitaxial layer, wherein the first epitaxial layer is doped by a dopant, and wherein a dopant activation level of the first epitaxial layer is in a range from about 2E20 atoms/cm³ to about 6E20 atoms/cm³.
 11. The integrated circuit of claim 10, wherein the first epitaxial layer is doped with carbon and phosphorus.
 12. The integrated circuit of claim 10, wherein the first epitaxial layer has a resistance in a range from about 0.2 mohm-cm to about 0.6 mohm-cm.
 13. The integrated circuit of claim 10, wherein the second epitaxial layer comprises materials that are the same as or similar to those of the first epitaxial layer.
 14. The integrated circuit of claim 13, wherein the second epitaxial layer has a dopant concentration different from a dopant concentration of the first epitaxial layer.
 15. The integrated circuit of claim 10, wherein an upper surface of the second epitaxial layer is above an upper surface of the substrate.
 16. The integrated circuit of claim 10, wherein an upper surface of the second epitaxial layer is level with an upper surface of the substrate.
 17. A semiconductor device, comprising: a first gate structure over a substrate, the first gate structure comprising: a first gate dielectric layer over the substrate; a first gate electrode over the first gate dielectric layer; and a first gate spacer around the first gate electrode; a second gate structure over the substrate and adjacent to the first gate structure, the second gate structure comprising: a second gate dielectric layer over the substrate; a second gate electrode over the second gate dielectric layer; and a second gate spacer around the second gate electrode; a recess formed in the substrate, the recess extending from the first gate structure to the second gate structure; a silicon-containing material structure formed in and over the recess, the silicon-containing material structure comprising: a first epitaxial layer partially filling the recess, the first epitaxial layer contacting a bottom and a sidewall of the recess, the first epitaxial layer being doped by a dopant, a dopant activation level of the first epitaxial layer being in a range from about 2E20 atoms/cm³ to about 6E20 atoms/cm³, and a resistance of the first epitaxial layer being in a range from about 0.2 mohm-cm to about 0.6 mohm-cm; and a second epitaxial layer over the first epitaxial layer, the second epitaxial layer filling a remaining portion of the recess unfilled by the first epitaxial layer.
 18. The semiconductor device of claim 17, wherein a distance between the first gate spacer of the first gate structure and the second gate spacer of the second gate structure is in a rage from about 50 Å to about 500 Å.
 19. The semiconductor device of claim 17, wherein the first epitaxial layer is doped with carbon and phosphorus.
 20. The semiconductor device of claim 17, further comprising a first lightly-doped-drain (LDD) and a second LDD formed in the substrate, wherein the first LDD and the second LDD are under a perimeter portion of the first gate structure and a perimeter portion of the second gate structure, respectively, and wherein the first LDD and the second LDD both contact the first epitaxial layer. 